 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 4AK19 Silicon N Channel MOS FET High Speed Power Switching ADE-208-727 (Z) 1st. Edition February 1999 Features * Low on-resistance N Channel: R DS(on) 0.5 , VGS = 10 V, ID = 2.5 A R DS(on) 0.6 , VGS = 4 V, ID = 2.5 A * 4 V gate drive devices. * High density mounting Outline SP-10 3 D 2G 4 G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain 4AK19 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1. PW 10 s, duty cycle 1% 2. 4 devices poeration Symbol VDSS VGSS ID I D(pulse) I DR Pch(Tc = 25C) Pch Tch Tstg Note2 Note2 Note1 Ratings 120 20 5 10 5 28 3.5 150 -55 to +150 Unit V V A A A W W C C Electrical Characteristics (Ta = 25C) Item Symbol Min 120 20 -- -- 1.0 -- -- 3 -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.3 0.35 5 25 140 3 2.5 0.3 0.45 6.6 1.4 1.1 600 Max -- -- 100 10 2.0 0.5 0.6 -- -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF k s s s s V ns I F = 5 A, VGS = 0 I F = 5 A, VGS = 0 diF/ dt = 50A/ s Test Conditions I D = 10 mA, VGS = 0 I G = 100 A, VDS = 0 VDS = 100 V, VGS = 0 VGS = 16 V, VDS = 0 I D = 1 mA, VDS = 10 V I D = 2.5 A, VGS = 10 V Note3 I D = 2.5 A, VGS = 4 V Note3 I D = 2.5 A, VDS = 10 V Note3 VDS = 10 V VGS = 0 f = 1 MHz VDS = 0, VGS = 0, f = 1 MHz VGS = 10 V, ID = 2.5 A RL = 12 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate series resistance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 3. Pulse test I DSS I GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg t d(on) tr t d(off) tf VDF t rr 2 4AK19 Main Characteristics Maximum Channel Dissipation Curve 8 Pch (W) Pch (W) Condition : Channel dissipation of each die is idetical 6 4 Device Operation 4 3 Device Operation 2 Device Operation 1 Device Operation 2 Maximum Channel Dissipation Curve 46 Condition : Channel dissipation of each die is idetical 32 4 Device Operation 28 3 Device Operation 2 Device Operation 1 Device Operation 14 Channel Dissipation Channel Dissipation 0 50 100 150 Ta (C) 200 0 50 100 150 Tc (C) 200 Ambient Temperature Case Temperature 50 I D (A) 20 10 5 Maximum Safe Operation Area Typical Output Characteristics 5 10 V 4V Pulse Test PW D C O pe 10 = 10 10 0 s s I D (A) 4 3V 3 1 m s m (1 Drain Current 2 1 ra t io n sh Drain Current s ot 2 2.5 V 1 VGS = 2 V 0.5 Operation in = 25 this area is C ) 0.2 limited by R DS(on) (T c ) 0.1 0.05 1 Ta = 25 C 3 10 30 100 300 1000 Drain to Source Voltage V DS (V) 0 4 8 12 Drain to Source Voltage 16 20 V DS (V) 3 4AK19 Drain to Source Saturation Voltage vs. Gate to Source Voltage V DS(on) (V) 2.0 Pulse Test ID=5A Typical Transfer Characteristics 5 V DS = 10 V Pulse Test (A) 4 1.6 ID Drain to Source Voltage 3 1.2 Drain Current 2 0.8 Tc = 75C 1 25C -25C 2A 1A 0.4 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 0 2 4 6 Gate to Source Voltage 8 10 V GS (V) Static Drain to Source on State Resistance R DS(on) ( ) Drain to Source On State Resistance R DS(on) ( ) Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test 2 1 0.5 0.2 0.1 0.05 0.1 0.2 VGS = 4 V 10 V Static Drain to Source on State Resistance vs. Temperature 1.0 Pulse Test 0.8 ID=5A 0.6 V GS = 4 V 0.4 10 V 0.2 0 -40 2A 1A 5A 1 A, 2 A 0.5 1 2 5 10 Drain Current I D (A) 20 0 40 80 120 160 Case Temperature Tc (C) 4 4AK19 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) 10 5 Tc = -25 C 2 75 C 1 25 C 0.5 Reverse Recovery Time trr (ns) 5000 Body-Drain Diode Reverse Recovery Time 2000 1000 500 200 100 50 0.1 di/dt = 50 A/s V GS = 0, Ta = 25C 0.2 0.5 1 2 5 10 Reverse Drain Current I DR (A) 0.2 0.1 0.1 V DS = 10 V Pulse Test 0.2 0.5 1 2 5 10 Drain Current I D (A) 1000 300 Capacitance C (pF) 100 30 10 3 1 0.3 0.1 0 Typical Capacitance vs. Drain to Source Voltage V DS (V) VGS = 0 f = 1 MHz Coss Ciss 100 Dynamic Input Characteristics V GS (V) Gate to Source Voltage 5 20 VGS VDS 60 V DD = 25 V 50 V 80 V 12 80 16 Drain to Source Voltage 40 V DD = 25 V 50 V 80 V 8 ID=5A 4 0 20 Crss 20 10 20 30 40 50 0 Drain to Source Voltage V DS (V) 4 8 12 16 Gate Charge Qg (nc) 4AK19 Reverse Drain Current vs. Souece to Drain Voltage 5 Reverse Drain Current I DR (A) Pulse Test 10 5 Switching Time t (s) 2 Switching Characteristics t d(off) 4 tf 1 0.5 0.2 0.1 0.1 tr t d(on) V GS = 10 V, V DD = 30 V PW = 20 s, duty < 1 % 0.2 0.5 1 Drain Current 2 5 I D (A) 10 3 5, 10 V 2 V GS = 0, -5 V 1 0 0.4 0.8 1.2 1.6 V DS (V) 2.0 Drain to Source Voltage Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr 6 4AK19 Package Dimensions Unit: mm 26.5 0.3 4.0 0.2 2.5 10.5 0.5 10.0 0.3 1.5 0.2 1.82 2.54 1.4 0.55 0.1 0.55 -0.06 +0.1 1 2 3 4 5 6 7 8 9 10 Hitachi Code JEDEC EIAJ SP-10 -- -- 7 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
Price & Availability of 4AK19
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |